document number: 93606 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 12-may-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 insulated ultrafast rectifier module, 130 a vs-UFB130FA20 vishay semiconductors features ? two fully independent diodes ? fully insulated package ? ultrafast, soft reverse recovery, with high operation junction temperature (t j max. = 175 c) ? low forward voltage drop ? optimized for power conver sion: welding and industrial smps applications ? easy to use and parallel ? industry standard outline ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the vs-UFB130FA20 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard sot-227 package. the diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. these devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, smps, dc/dc converters. their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and emi/rfi. product summary v r 200 v i f(av) per module at t c = 116 c 130 a t rr 32 ns type modules - diode fred pt ? s ot-227 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 200 v continuous forward current per diode i f t c = 124 c 65 a single pulse forwar d current per diode i fsm t c = 25 c 890 maximum power dissip ation per module p d t c = 124 c 119 w rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v operating junction and storage temperatures t j , t stg - 55 to 175 c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93606 2 revision: 12-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB130FA20 vishay semiconductors insulated ultrafast r ectifier module, 130 a electrical specifications per diode (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 200 - - v forward voltage v fm i f = 60 a - 0.96 1.13 i f = 60 a, t j = 175 c - 0.75 0.89 reverse leakage current i rm v r = v r rated - 2 50 a t j = 175 c, v r = v r rated - - 1 ma junction capacitance c t v r = 200 v - 105 - pf dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 32 - ns t j = 25 c i f = 50 a di f /dt = 200 a/s v r = 100 v -42- t j = 125 c - 68 - peak recovery current i rrm t j = 25 c - 4.0 - a t j = 125 c - 9.0 - reverse recovery charge q rr t j = 25 c - 82 - nc t j = 125 c - 295 - thermal - mechanical specifications parameter symbol test condi tions min. typ. max. units junction to case, si ngle leg conducting r thjc - - 0.86 c/w junction to case, both leg conducting - - 0.43 case to heatsink r thcs flat, greased surface - 0.10 - weight -30- g mounting torque -1.3-nm case style sot-227 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 93606 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 12-may-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB130FA20 insulated ultrafast re ctifier module, 130 a vishay semiconductors fig. 1 - typical forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per diode) 1 10 t j = 175 c t j = 25 c 0 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 1000 0.5 1.5 2.5 12 0.01 0.1 1 10 100 0 100 150 v r - reverse voltage (v) i r - reverse current (a) 200 50 0.001 1000 t j = 175 c t j = 25 c reverse voltage - v r (v) junction capacitance - c t (pf) 10 100 1000 1 10 100 1000 t j = 25 c 0.01 0.1 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 dc single pulse (thermal resistance) 10 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93606 4 revision: 12-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB130FA20 vishay semiconductors insulated ultrafast r ectifier module, 130 a fig. 5 - maximum allowable case temperature vs. avarage forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r i f(av) - average forwar d current allowable case temperature (c) 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 dc sq uare wave (d = 0.5) rated v r applied i f(av) - average forwar d current (a) average power loss (w) 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 110 120 rm s limit d = 0.05 d = 0.10 d = 0.20 d = 0.50 d = 0.33 dc t rr (ns) 0 10 20 30 40 50 60 70 80 t j = 125 c t j = 25 c i f = 50 a v rr = 200 v 100 1000 d i f / d t (a/s) q rr (nc) 0 100 200 300 400 500 600 700 800 0 0 0 1 0 0 1 t j = 125 c t j = 25 c i f = 50 a v rr = 200 v d i f / d t (a/s) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 93606 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 12-may-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB130FA20 insulated ultrafast re ctifier module, 130 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93606 6 revision: 12-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-UFB130FA20 vishay semiconductors insulated ultrafast r ectifier module, 130 a ordering information table circuit configuration circuit circuit configuration code circuit drawing 2 separate diodes, parallel pin-out f links to related documents dimensions www.vishay.com/doc?95423 packaging information www.vishay.com/doc?95425 1 - vishay semiconductors product 2 - ultrafast rectifier 3 - ultrafast pt diffused 4 - current rating (130 = 130 a) 5 - circuit configuration (2 separate diodes, parallel pin-out) 6 - package indicator (sot-227 standard isolated base) - voltage rating (20 = 200 v) 7 device code 5 1 3 2 4 6 7 vs- uf b 130 f a 20 1 43 2 lead a ss ignment 1 4 2 3 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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